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1. 2   ~ 2.3 μm laser crystals doped with Tm3+ Compared with the 2 μm band (3F4 → 3H6) of Tm3+, the 2.3 μm laser operation based on the 3H4 → 3H5 transition of the Tm3+ doped laser medium has the following advantages: (1) ~790 nm LD is directly pumped to the upper energy level of the laser. Tm3+ has a strong absorption around 790 nm (directly corresponding to the 3H4 → 3H6 transition), which can match the emission wavelength of the current mature commercial AlGaAs LD, so as to realize high-performance LD pumping all-solid-state high-efficiency 2.3 μm laser operation.

3.3 Laser pretreatment of dielectric film with large diameter Laser pretreatment technology is the last process before the supply of large-diameter components with dielectric film in NIF devices in the United States. LLNL provides their laser pretreatment device and specifications to each of their supplier of thin film components.

2-5 μm mid-infrared laser crystals have important applications in directional infrared countermeasures, anti-terrorism, biomedicine, environmental monitoring, optical communications, strong field physics, laser fusion, and mid-to-far infrared (nonlinear frequency conversion) basic light sources, etc. With the related development of the pump source technology of semiconductor laser (laser diode, LD), solid-state laser and fiber laser (including resonant pump), mid-infrared crystal has become one of the four main laser crystals developed currently.

3.4 Laser pretreatment of DKDP component The laser-damaged precursor of DKDP crystals (provided by WISOPTIC) is in the material body, so it is different from the removal of surface nodule defects in dielectric films. Laser pretreatment cannot remove the precursors in the body, but can only reduce the thermodynamic response of the precursors under laser radiation by improving their absorption intensity. There are still different opinions on this mechanism.

Experimental SetupIn order to obtain a 266 nm deep ultraviolet laser with high efficiency and stable operation, this paper built an all-solid-state 266 nm deep ultraviolet laser generation device as shown in Figure 1, which consists of a cavity-dumped all-solid-state Nd:YVO4 laser, a double-frequency system, and a quadruple-frequency system.Fig.

03 Experimental results and analysisWhen the green light input power is lower than 4 W, the matching temperature of the BBO crystal has little effect on the output power of the quadrupled 266 nm laser, and when the optimal power of ultraviolet light output is achieved, the temperature offset ΔT of the heating device also tends to be consistent; when the green light input power is greater than 8 W, the higher the matching temperature of the BBO crystal (www.wisoptic.com), the smaller the temperature offset ΔT of the heating device, and the higher the output power of the 266 nm la

1.3 Doping of Lithium Tantalate CrystalDifferent fields have different requirements for the properties of lithium tantalate crystals. When being used to prepare high-density and large-capacity holographic information storage devices, LiTaO3 crystals need to have excellent photorefractive properties. Due to the particularity of the crystal structure of LiTaO3, its physical properties can be adjusted through doping, for example, the widely used photorefractive doping.

3 The main application of lithium tantalate crystal3.1 SAW Wave filterThere are many studies on filters in SAW devices. Wave filters have the advantages of low transmission loss, high reliability, great manufacturing flexibility, analog/digital compatibility, excellent frequency selection characteristics, and can realize a variety of complex functions.

2.1 Manipulating and understanding laser damage precursors through material growth processesCombined with the statistical model, information such as precursor density and threshold distribution can be extracted from the damage probability curve, which indirectly reflects the information of the precursor. The analysis shows that the KDP crystal (www.wisoptic.com) mainly contains a precursor with a threshold distribution.

Conclusion Considering comprehensive factors such as wide absorption bandwidth, large absorption cross section, long upper energy level lifetime (ms to tens of ms) (see Table 2), ion cross relaxation, increased quantum efficiency, and mature LD pump source, Tm3+ in the 2 μm band, Ho3+ and Er3+ in the 3 μm band must be one of the most important and basic laser sources in the mid-infrared band from 2 to 20 μm, and will compete with Nd3+ and Yb3+ in the 1 μm band.